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Iyini i-photovotaics?

2022-12-22

I-Photovoltaics ukuguqulwa okuqondile kokukhanya kube ugesi ezingeni le-athomu. Ezinye izinto ezisetshenziswayo zibonisa impahla eyaziwa ngokuthi umphumela wesithombe kagesi obenza bamunce ama-photon okukhanya futhi bakhulule ama-electron. Uma lawa ma-electron amahhala ebanjwa, imiphumela yamanje kagesi engasetshenziswa njengogesi.

Umphumela we-photoelectric waphawulwa okokuqala isazi sefiziksi esingumFulentshi, u-Edmund Bequerel, ngo-1839, owathola ukuthi izinto ezithile zazizokhiqiza amanani amancane kagesi lapho zivezwe ekukhanyeni. Ngo-1905, u-Albert Einstein wachaza uhlobo lokukhanya kanye nomphumela we-photoelectric lapho ubuchwepheshe be-photovoltaic busekelwe khona, okwathi kamuva wathola umklomelo weNobel ku-physics. Imojula yokuqala ye-photovoltaic yakhiwa yi-Bell Laboratories ngo-1954. Yakhokhiswa njengebhethri yelanga futhi ikakhulukazi ilukuluku lokufuna ukwazi njengoba ibiza kakhulu ukuze isetshenziswe kabanzi. Ngawo-1960, imboni yasemkhathini yaqala ukusebenzisa kakhulu ubuchwepheshe ukuze inikeze amandla emkhathini. Ngezinhlelo zasemkhathini, ubuchwepheshe buthuthukile, ukwethembeka kwabo kwasungulwa, futhi izindleko zaqala ukwehla. Ngesikhathi senhlekelele yamandla ngawo-1970, ubuchwepheshe be-photovoltaic bathola ukuqashelwa njengomthombo wamandla wezinhlelo zokusebenza ezingezona isikhala.

Umdwebo ongenhla ubonisa ukusebenza kweseli eyisisekelo ye-photovoltaic, ebizwa nangokuthi iseli yelanga. Amaseli elanga enziwe ngezinto ezifanayo ze-semiconductor, njenge-silicon, esetshenziswa embonini ye-microelectronics. Kumaseli elanga, i-wafer encane ye-semiconductor iphathwa ngokukhethekile ukuze yakhe inkambu kagesi, enhle ngakolunye uhlangothi futhi engemihle ngakolunye. Lapho amandla okukhanya eshaya ingqamuzana lelanga, ama-electron adedeleka kuma-athomu asendaweni ye-semiconductor. Uma amakhondatha kagesi enamathiselwe ezinhlangothini ezinhle nezingezinhle, enza isekethe kagesi, ama-electron angabanjwa ngendlela yamandla kagesi -- okungukuthi, ugesi. Lo gesi ungase usetshenziselwe ukunika amandla umthwalo, njengesibani noma ithuluzi.

Inani lamaseli elanga axhunywe kwamanye futhi afakwe esakhiweni sokusekela noma uhlaka abizwa ngokuthi imojula ye-photovoltaic. Amamojula aklanyelwe ukuhlinzeka ugesi ku-voltage ethile, njengesistimu evamile engu-12 volts. Amanje akhiqizwayo ancike ngokuqondile ekutheni kungakanani ukukhanya okushaya imojula.

Imishini ye-PV evamile yanamuhla isebenzisa ukuhlangana okukodwa, noma isixhumi esibonakalayo, ukwakha inkambu kagesi ngaphakathi kwe-semiconductor efana neseli ye-PV. Kuseli ye-PV ye-junction eyodwa, ama-photon kuphela amandla awo alingana noma amakhulu kunegebe lebhendi lento yeseli angakhulula i-electron kusekethe kagesi. Ngamanye amazwi, impendulo ye-photovoltaic yamangqamuzana e-single-junction ilinganiselwe engxenyeni ye-spectrum yelanga amandla ayo angaphezulu kwegebe lebhande lempahla emuncayo, futhi ama-photon ane-low-energy awasetshenziswa.

Enye indlela yokuzungeza lo mkhawulo ukusebenzisa amaseli amabili (noma ngaphezulu) ahlukene, anegebe lebhendi elingaphezu kwelilodwa kanye nokuhlangana okungaphezu kweyodwa, ukukhiqiza amandla kagesi. Lawa abizwa ngokuthi amaseli "ama-multijunction" (abuye abizwe ngokuthi "amaseli e-cascade" noma "tandem"). Amadivayisi e-Multijunction angafinyelela ukusebenza kahle okuphezulu kwengqikithi yokuguqulwa ngoba angaguqula i-spectrum yamandla amaningi wokukhanya abe ugesi.

Njengoba kuboniswe ngezansi, idivayisi ye-multijunction iyinqwaba yamaseli e-junction eyodwa ngokulandelana okwehlayo kwe-band gap (Isb). Iseli eliphezulu lithwebula ama-photon anamandla aphezulu futhi lidlulisele amanye ama-photon ukuze amuntshwe amaseli e-low-band-gap.

Ucwaningo oluningi lwanamuhla kumaseli e-multijunction lugxile ku-gallium arsenide njengenye (noma yonke) yengxenye yeseli. Amaseli anjalo afinyelele ukusebenza kahle okungaba ngu-35% ngaphansi kokukhanya kwelanga okugxilile. Ezinye izinto ezifundelwa amadivaysi e-multijunction kube i-amorphous silicon ne-copper indium diselenide.

Njengesibonelo, idivayisi ye-multijunction engezansi isebenzisa iseli eliphezulu le-gallium indium phosphide, "i-tunnel junction," ukusiza ukuhamba kwama-electron phakathi kwamaseli, neseli elingezansi le-gallium arsenide.

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